设为首页  |   加入收藏
引用本文:
【打印本页】   【下载PDF全文】   查看/发表评论  【EndNote】   【RefMan】   【BibTex】
←前一篇|后一篇→ 过刊浏览    高级检索
本文已被:浏览 106次   下载 39 本文二维码信息
码上扫一扫!
分享到: 微信 更多
CO2浓度与氮磷供应水平对黄瓜根系生长及各组织矿质养分含量的影响
陈雨娇1, 李 汛2, 田兴军1, 段增强2
1.南京大学生命科学学院;2.土壤与农业可持续发展国家重点实验室(中国科学院南京土壤研究所)
摘要:
在开顶式生长箱内,以黄瓜为试验材料,采用营养液培养方法,研究了不同氮、磷水平条件下大气CO2浓度对黄瓜植株矿质养分含量以及根系生长的影响。结果表明:黄瓜植株各部位N素含量随供氮水平提高而增加,磷水平提高也能促进各部位N含量的提高。植株各部位P含量随供磷水平的提高而升高,在相同磷水平下,缺氮会使各部位P含量升高。大气CO2浓度升高会使黄瓜植株各部位氮及特定部位的P含量降低。黄瓜根部的Ca含量随CO2浓度的升高而显著降低,氮和磷水平的升高极显著地增加其含量,且CO2浓度与供磷水平、供氮与供磷水平以及这三者之间存在明显的交互作用。供氮、供磷水平的升高极显著地提高了黄瓜叶片Ca的含量以及茎部Mg的含量,且两者存在明显的交互作用。黄瓜总根长和总根表面积随CO2浓度的增加有增大的趋势;在缺磷条件下,总根长和总根表面积随氮水平的提高而增大;而同一氮水平和CO2浓度下,磷水平的降低会增加总根长和总根表面积。总体看来,大气CO2浓度的升高能促进黄瓜根系的生长,但会使得黄瓜植株某些部位N、P、Ca、Mg等矿质元素含量降低,而供氮、供磷水平的提高可以通过增强黄瓜的生长与活力促进黄瓜根系对矿质养分的吸收,从而缓解由于CO2浓度升高带来的矿质元素含量降低的风险。由此,在对设施蔬菜CO2施肥的同时,也要注重适量提高合理配比下矿质元素的供应。
关键词:  大气CO2浓度  氮水平  磷水平  矿质养分含量  根系生长
DOI:10.13758/j.cnki.tr.2020.06.004
分类号:Q945.1;Q945.3;S627
基金项目:国家自然科学基金项目(41877103)和中科院战略性先导科技专项B类(XDB15030300)资助。
Effects of Atmospheric CO2 Concentration, Nitrogen and Phosphorus Levels on Root Growth and Mineral Nutrient Concentrations in Different Organs of Cucumber
CHEN YuJiao1, LI Xun2, TIAN XingJun1, DUAN ZengQiang2
1.School of Life Science, Nanjing University;2.State Key Laboratory of Soil and Sustainable Agriculture, Institute of Soil Science, Chinese Academy of Sciences
Abstract:
In the open-top chambers, the effects of different combinations of atmospheric CO2 concentration ([CO2]), nitrogen (N) and phosphorus (P) levels on cucumber were studied by the nutrient solution culture method, in terms of micronutrients concentrations and root morphological traits. Three [CO2] levels (400 μmol/mol (CK, C1), 625 μmol/mol (C2), 1200 μmol/mol (C3)), three N levels (low N (N1), medium N (N2), high N (N3)) and two P levels (low P (P1), medium P (P2)) were used. The results showed that the N concentrations in all parts of cucumber increased with the increase of N level, and the N concentration in N3 treatment was significantly higher than that in N1 and N2. The increase of P level also promoted the N concentrations in cucumber. The concentrations of P in all parts of plants increased with the P supply increasing. Under the condition of N deficiency (N1), the concentration of P in each part increased. Elevated [CO2] reduced N and P concentrations in specific parts of cucumber plants. The total root length and total root surface area of cucumber increased with the [CO2] increasing. The concentration of calcium (Ca) in the roots of cucumber decreased significantly with the increase of [CO2], whereas higher N and P levels significantly increased its concentration. There were apparent interactions between the [CO2] and P level, N level and P level, and within these three factors on Ca concentration in the roots of cucumber. The rise of N level and P level also significantly increased the concentration of Ca in cucumber leaves and the concentration of magnesium (Mg) in stems, and there was a significant interaction between N and P levels. Under the condition of P deficiency (P1), the total root length and total root surface area increased with the increase of N level, whereas a decrease in P levels caused an increase in total root length and total root surface area at the same N level and [CO2]. In general, the increase of [CO2] can promote the growth of cucumber roots, but it will reduce the concentrations of mineral elements such as N, P, Ca and Mg in some parts of cucumber. However, the increase of N and P levels can promote the absorption of mineral nutrients in roots by enhancing the growth and vitality of cucumber, thereby alleviating the risk of a decrease in mineral elements concentrations due to the elevated [CO2]. This suggests us that application of the suitable amount and the matched proportion of mineral elements are quite necessary while CO2 fertilization is conducted to the greenhouse vegetables.
Key words:  Atmospheric CO2 concentration  Nitrogen supply level  Phosphorus supply level  Mineral element concentrations  Root growth

您是第3617297位访问者
版权所有 © 《土壤》编辑部
本系统由北京勤云科技发展有限公司设计   京ICP备09084417号